Samsung Launches SZ985 Z-SSD Using Revolutionary Z-NAND

👤by Michael Pabia Comments 📅30.01.2018 22:52:09

Press Release

Samsung launches an 800GB-capacity of the new SZ985 Z-SSD for the most advanced enterprise applications such as AI Analysis and supercomputing. The Samsung Z-SSD line offers the most efficient data storage solution for high-speed cache data and processing log data. Samsung claims it will definitely address the increasing demands from the AI, large data, and IoT markets.

Benefits of Z-NAND

The new single port, four-lane Z-SSD features Z-NAND chips that provide 10 times higher cell read performance than 3-bit V-NAND chips, along with 1.5GB LPDDR4 DRAM and a high-performance controller. Armed with some of the industry’s most advanced components, the 800GB Z-SSD features 1.7 times faster random read performance at 750K IOPS, and five times less write latency – at 16 microseconds, compared to an NVMe SSD PM963, which is based on 3-bit V-NAND chips. The Z-SSD also delivers a random write speed of up to 170K IOPS.

Samsung SZ985 Z-NAND SSD Specifications
Form Factor: HHHL
Interface: PCIe Gen3 x4
NAND: Z-NAND Technology
Port: Single

Data Transfer Rate (128KB data size)
Sequential Read / Write (MB/s): 3200 / 3200

Data I/O Speed (4KB data Size, sustained)
Random Read/Write (IOPs): 750K/170K

Latency: (sustained random workload)
Random Read: 12 – 20 microseconds
Random Write: (Typical) 16 microseconds
DWPD: 30
Capacity: 800GB

Samsung will be introducing 240GB and 800GB versions of the SZ985 Z-NAND SSD and other technologies at the ISSCC 2018. Read Samsung’s Z-NAND Technology brief here.

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