Samsung Mass Produces 2nd-Gen 10nm-Class 16Gb LPDDR4X Mobile DRAM
Samsung begins mass producing the first batch of second-generation 10-nanometer class LPDDR4X DRAM for mobile applications offering up to 8GB LPDDR4 DRAM memory on flagship mobile devices and smartphones. The new LPDDR4X DRAM offers improved power efficiency that will improve the battery life of the next-generation smartphones and other mobile devices. It offers 10% less power consumption compared to the current generation DRAM memory chips while retaining the same performance of 4,266 megabits per second. The Samsung LPDDR4X DRAM is expected to power the next-generation flagship mobile smartphones late this year and in 2019.
Samsung will be continuing the expansion of its premium DRAM line-up based on the 10-nanometer process after it started mass producing the first 10-nanometer 8Gb DDR4 DRAM last November. Samsung was able to create an 8GB LPDDR4X mobile DRAM by combining four 16Gb LPDDR4X DRAM memory in one package. Hence, Samsung will be providing a selection of high-capacity packages including 4GB, 6GB, and 8GB LPDRR4X package. With this, future smartphones can easily come up to par with the Razer Phone’s 8GB memory.
Check out Samsung’s Mass Production History of Mobile DRAM since 2012 Below:
2012.08 - 2GB 30nm-class 4Gb LPDDR3, 1600Mb/s
2013.04 - 2GB 20nm-class (2y) 4Gb LPDDR3, 2133Mb/s
2013.11 - 3GB 20nm-class (2y) 6Gb LPDDR3, 2133Mb/s
2014.09 - 3GB 20nm-class (2z) 6Gb LPDDR3, 2133Mb/s
2014.12 - 4GB 20nm-class (2z) 8Gb LPDDR4, 3200Mb/s
2015.08 - 6GB 20nm-class (2z) 12Gb LPDDR4, 4266Mb/s
2016.09 - 8GB 10nm-class (1x) 16Gb LPDDR4, 4266Mb/s
2018.07 - 8GB 10nm-class (1y) 16Gb LPDDR4X, 4266Mb/s
2018.07 - Develops 10nm-class 8Gb LPDDR5, 6400Mb/s