Samsung starts the mass production of its first 4Terabyte 4-bit QLC solid-state drive for consumers. It boasts the same performance as the 3-bit design but bringing in larger capacities and a higher level of efficiency to Samsung’s line-up of consumer solid-state drives. The new 1Tb 4-bit V-NAND chips will not only produce the 4TB SSDs, it will also produce 128GB memory cards for next-generation smartphones and devices that can accommodate high-performance, high-capacity flash memory storage.
“Samsung’s new 4-bit SATA SSD will herald a massive move to terabyte-SSDs for consumers. As we expand our lineup across consumer segments and to the enterprise, 4-bit terabyte-SSD products will rapidly spread throughout the entire market.” – Jaesoo Han, Executive Vice President of Memory Sales and Marketing at Samsung Electronics.
Samsung’s mass production history of SSDs in bits per cell
The new Samsung’s 4-bit 4TB QLC SATA SSD’s performance level is the same with the 3-bit Samsung SSDs by utilizing a 3-bit SSD controller and TurboWrite technology while significantly increasing drive capacity. The Samsung 4TB QLC SSD uses 32 chips that is based on Samsung’s 64-layer fourth-generation 1Tb V-NAND. The new Samsung 4TB QLC SSD packs sequential read speeds of up to 540MB/s and sequential write speeds of up to 520MB/s. Aside from the 4TB QLC SSD, Samsung will also be using the 4-bit QLC to create 1TB and 2TB capacities in the 2.5-inch SSD form factor.
Moving forward with Samsung’s application of new technologies, Samsung will be developing an enterprise-class M.2 NVMe solid-state drives this year and begin mass production of the 4-bit fifth-generation V-NAND for Samsung’s future expansion of its SSD line-up.