Last week, Toshiba announces the new 96-Layer BiCS Flash with QLC technology that opens new possibilities for higher capacity flash storage. Western Digital partners with Toshiba to implement the new BiCS Flash to create the industry’s highest 3D NAND storage capacity of 1.33 Terabits (Tb) in a single chip package. The 96-Layer BiCS Flash, also known as BiCS4 Flash, was developed in a joint venture with Toshiba at the Yokkaichi, Japan. Western Digital aims to deploy a wide variety of flash products featuring the newly developed BiCS4 flash to be marketed under the SanDisk brand.
QLC Technology pushes the bit count for data per memory cell from three to four which results to a significantly higher capacity. This enables a maximum capacity of 1.33 Terabytes on a single chip, up to 2.66 terabytes capacity in one package using a 16-chip stacked architecture. A packaged prototype of the new device will be exhibited at the 2018 Flash Memory Summit in Santa Clara, California, the United States from August 6th to 9th.
SanDisk, a subsidiary of Western Digital, is a manufacturer of flash memory products, including memory cards and readers, USB flash drives, and solid-state drives. Expect SanDisk’s next-generation flash products to feature the BiCS4 NAND Flash.
Learn more about the new Toshiba 96-Layer BiCS Flash with QLC Technology here.
Learn more about Western Digital at https://www.wdc.com/