Toshiba pushes its BiCS Flash production to a higher level with a new fabrication facility called K1 in KitaKami, Iwate prefecture in Japan. Earlier this month, Toshiba reveals its newly developed 96-layer BiCS Flash with QLC Technology which is already being tested to create the next generation flash products for Western Digital under the SanDisk branding. Toshiba will also be using the new BiCS Flash memory on the new XG6 Series NVMe solid-state drives. Toshiba expects the rise of demand for 3D flash memory to address the also growing demands for data centres, enterprise servers, consumers devices, and smartphones. The K1 fabrication facility will be dedicated to the production of 3D flash memory only including the new BiCS4 Flash.
Toshiba will use the new K1 facility to make a major contribution in terms of production of 3D NAND flash memory, BiCS Flash in particular. Toshiba expects continued strong growth for mid-term and long-term as production increases with the completion of the new K1 fabrication facility by Autumn 2019. The K1 facility features an advanced seismic isolation structure construction that will allow it to absorb earthquake tremors. It also features the latest in energy-saving manufacturing facilities along with an advanced production system with A.I. assistance. Toshiba will also be engaging in a joint venture with Western Digital in the new K1 facility.